2-93 small signal rf pin diode chips for hybrid integrated circuits technical data features ? thermocompression/ thermosonically bondable ? ideal for hybrid integrated circuits ? gold metallization ? silicon nitride passivation ? uniform electrical characteristics ? batch matched versions available ? planar construction hpnd-0001 HPND-0002 outline 01b chip dimensions d x y x dimensions d x y top contact bottom contact dimensions in millimeters (1/1000 inch). for epoxy or eutectic die attach part no. hpnd- -0001 0.25 (10) 0.51 (20) 0.15 (6) cathode anode -0002 0.20 (8) 0.38 (15) 0.15 (6) cathode anode (0.03) (1) (0.05) (2) (0.03) (1) description these pin/nip diode chips are specifically designed for hybrid applications requiring thermo- sonic or thermocompression bonding techniques. the top metallization is a layer of gold for a tarnish free surface that allows either thermosonic or thermocompression bonding techniques. the bottom metalli- zation is also gold, suitable for epoxy or eutectic die attach method. applications these small signal, general purpose pin/nip diode chips are optimized for various analog and digital applications such as switches, digital phase shifters, pulse and amplitude modulators, limiters, leveling, and attenuating. 5965-9143e
2-94 maximum ratings junction operating and storage temperature range ...................................................... -65 c to +150 c t a = 25 c p d power dissipation ................................................................ 250 mw (measured in an infinite heat sink derated linearly to zero at 150 c.) operation in excess of any one of these conditions may result in permanent damage to this device. electrical specifications at t a = 25 c typical parameters chip for nearest nearest epoxy or equivalent equivalent minimum typical typical reverse eutectic surface mount axial lead breakdown maximum series carrier recovery die attach part no. part no. voltage capacitance resistance lifetime time hpnd- hsmp- 5082- v br (v) c j (pf) r s ( w ) t (ns) t rr (ns) 0001 3800 3080 100 0.20 2.0 1800 500 0002 3810 3081 100 0.20 3.5 1500 300 test v r = v br v r = 50 v i f = 100 ma i f = 50 ma i f = 20 ma conditions measure *v r = 20 v *i f = 10 ma i r = 250 ma v r = 10 v i r 10 ma f = 1.0 mhz *i f = 10 ma 90% recovery *i r = 6 ma assembly and handling procedures for pin chips 1. storage devices should be stored in a dry nitrogen purged dessicator or equivalent. 2. cleaning if required, surface contamination may be removed with electronic grade solvents. typical solvents, such as freon (t.f. or t.m.c.), acetone, deionized water, and methanol, or their locally ap- proved equivalents, can be used singularly or in combinations. typical cleaning times per solvent are one to three minutes. di water and methanol should be used (in that order) in the final cleans. final drying can be accomplished by placing the cleaned dice on clean filter paper and drying with an infrared lamp for 5-10 minutes. acids such as hydrofluoric (hf), nitric (hno 3 ), and hydrochloric (hcl) should not be used. the effects of cleaning methods/ solutions should be verified on small samples prior to submitting the entire lot. following cleaning, dice should be either used in assembly (typically within a few hours) or stored in clean containers in a reducing atmosphere or a vacuum chamber. 3. die attach a. eutectic eutectic die attach can be accom- plished by scrubbing the die with/without a preform on the header to combine with the silicon in the die. temperature is approximately 400 c, with heating times of 5-10 seconds. (noteCtimes and temperature utilized may vary depending on the type, composition, and heat capacity of the header or sub- strate used.) this method is recommended for the hpnd-000x series. b. epoxy for epoxy die-attach, conductive silver-filled epoxies are recom- mended. this method can be used for all hewlett-packard pin chips. 4. wire bonding either ultrasonic, thermosonic or thermocompression bonding techniques can be employed. suggested wire is pure gold, 0.7 to 1.5 mil diameter.
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